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 Agilent AMMC-5026 2-35 GHz GaAs MMIC Traveling Wave Amplifier
Data Sheet
Features * Frequency range: 2 - 35 GHz * Gain: 10.5 dB * Gain flatness: 0.8 dB * Return loss: Input 17 dB, Output: 15 dB * Output power (P-1dB): 24 dBm at 10 GHz 23 dBm at 20 GHz 22 dBm at 26 GHz * Noise figure (6-19 GHz): 4 dB
Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 3050 x 840 m (119 x 33 mils) 10 m (0.4 mils) 100 10 m (4 0.4 mils) 75 x 75 m (2.9 0.4 mils)
Applications * Broadband gain block * Broadband driver amplifier * 10 Gb/s Fiber Optics
Description The AMMC-5026 is a broadband PHEMT GaAs MMIC Traveling Wave Amplifier (TWA) designed for medium output power and high gain over the full 2 GHz to 35 GHz frequency range. The design employs a 6-section cascode connected FET structure to provide flat gain and medium power as well as uniform group delay.
Absolute Maximum Ratings [1]
Symbol
Vdd Idd Vg1 Ig1 Vg2 Ig2 Pin Tch Tb Tstg Tmax
Parameters/Conditions
Positive Drain Voltage Total Drain Current First Gate Voltage First Gate Current Second Gate Voltage Second Gate Current CW Input Power Channel Temperature Operating Backside Temperature Storage Temperature Max. Assembly Temp (60 sec max)
Units
V mA V mA V mA dBm C C C C
Min.
Max.
10 450
-5 -9 -3 -10 23 +150 -55 -65 +165 +300 +5 +3.5
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device.
AMMC-5026 DC Specifications/Physical Properties[1]
Symbol
Idss Vp1 Vg2 Idsoff (Vg1) ch-b
Parameters and Test Conditions
Saturated Drain Current (Vdd =7 V, Vg1 =0 V, Vg2 =open circuit) First Gate Pinch-off Voltage (Vdd =7 V, Idd =0.1 Idss, Vg2 =open circuit) Second Gate Self-bias Voltage (Vdd =7 V, Idd =150 mA, Vg2 =open circuit) First Gate Pinch-off Current (Vdd=7 V, Vg1=3.5 V, Vg2=open circuit) Thermal Resistance[2] (Backside temperature, Tb = 25C)
Units
mA V V mA C/W
Min.
250
Typ.
350 -1.2 3.5 75 28
Max.
450
Notes: 1. Backside temperature Tb = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (ch-b) = 38C/W at Tchannel (Tc) = 150C as measured using the liquid crystal method. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data.
RF Specifications[3,4] (Vdd = 7V, Idd (Q) = 150 mA, Zin = Z0 = 50) Symbol
|S21|
2 2
Parameters and Test Conditions
Small-signal Gain Small-signal Gain Flatness Input Return Loss Output Return Loss
Units
dB dB dB dB dB f = 10 GHz f = 10 GHz dBm dBm dBm f = 10 GHz f = 20 GHz dB dB dBc dBc
Min.
8.5
Typ.
10.5 0.75
Max.
12.5 1.5
|S21| RLin RLout |S12| P-1dB Psat OIP3 NF H2 H3
2
13 12 23 22
17 15 26 24 26 31 3.6 4.3 -20 -30 -17.5 -28
Isolation Output Power @ 1 dB Gain Compression Saturated Output Power Output 3 Order Intercept Point, RFin1 = RFin2 = - 20 dBm, f = 10 GHz, f = 2 MHz Noise Figure Second Harmonic (Pin = 12 dBm at 10 GHz) Third Harmonic (Pin = 12 dBm at 10 GHz)
rd
Notes: 3. Data measured in wafer form, Tchuck = 25C. 4. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.
2
AMMC-5026 Typical Performance (Tchuck = 25C, Vdd = 7 V, Idd = 150 mA, Vg2 = Open, Z0 = 50)
15 10
RETURN LOSS (dB)
0 -5 -10 -15 -20 -25 -30 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) FREQUENCY (GHz)
S11(dB) S22(dB)
28 25
P1dB, P3dB (dBm)
P1dB P3dB
5
GAIN (dB)
22 19 16 13 10 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz)
0 -5 -10 -15
Figure 1. Gain.
Figure 2. Input and Output Return Loss.
Figure 3. Output Power at P1dB and P3dB.
160
8 7
NOISE FIGURE (dB)
40
120
tg (pS)
30
6
IP3 (dBm)
20
80
5 4 3
10
40 0
0
0
5
10
15
20
25
30
35
40
2
0
5
10
15
20
25
30
35
40
-10
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Group Delay.
Figure 5. Noise Figure.
Figure 6. Output 3rd Order Intercept Point.
3
AMMC-5026 Typical Performance (Tchuck = 25C, Vdd = 8 V, Idd = 150 mA, Vg2 = Open, Z0 = 50)
15 10 0 -5
S11(dB) S22(dB)
28 25
P1dB P3dB
RETURN LOSS (dB)
5
-10 -15 -20 -25 -30
P1dB, P3dB (dBm)
0 5 10 15 20 25 30 35 40
22 19 16 13 10 0 5 10 15 20 25 30 35 40
GAIN (dB)
0 -5 -10 -15
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Gain.
Figure 8. Input and Output Return Loss.
Figure 9. Output Power at P1dB and P3dB.
100
8 7
40
80
30
NOISE FIGURE (dB)
tg (pS)
60
OIP3 (dBm)
0 5 10 15 20 25 30 35 40
6 5 4 3 2
20
40
10
20
0
0
0
5
10
15
20
25
30
35
40
-10
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 10. Group Delay.
Figure 11. Noise Figure.
Figure 12. Output 3rd Order Intercept Point.
15
10
NF @ 25C NF @ -40C NF @ 85C
10
8
S21 (dB)
5
NF (dB)
S21(dB) 25C S21(dB) -40C S21(dB) 80C
6
4 0 2
-5
0
5
10
15
20
25
30
35
40
0
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Gain vs. Temperature.
Figure 14. Noise Figure vs. Temperature.
4
AMMC-5026 Typical Scattering Parameters[1] (Tchuck = 25C, Vdd = 7 V, Idd = 150 mA)
Freq. GHz
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0
dB
-24.93 -26.84 -25.16 -23.72 -22.99 -22.58 -21.97 -21.29 -20.67 -20.29 -20.47 -21.49 -23.65 -28.02 -39.49 -31.18 -24.21 -20.93 -18.20 -17.48 -17.43 -17.77 -18.27 -18.66 -18.56 -18.60 -19.07 -19.79 -18.63 -15.62 -13.40 -12.69 -14.73 -26.00 -14.82 -10.01 -9.81 -6.40 -4.23
S11 Mag
0.06 0.05 0.06 0.07 0.07 0.07 0.08 0.09 0.09 0.10 0.09 0.08 0.07 0.04 0.01 0.03 0.06 0.09 0.12 0.13 0.13 0.13 0.12 0.12 0.12 0.12 0.11 0.10 0.12 0.17 0.21 0.23 0.18 0.05 0.18 0.32 0.32 0.48 0.61
Ang
-56 -18 -2 2 2 1 1 -3 -7 -16 -29 -43 -59 -81 -131 86 60 38 13 -17 -46 -81 -119 -161 156 112 66 9 -59 -116 -161 161 127 120 -157 172 161 157 135
dB
9.89 9.50 9.14 8.90 8.81 8.87 9.04 9.24 9.42 9.53 9.56 9.52 9.46 9.40 9.36 9.41 9.52 9.68 9.79 9.94 10.02 10.07 10.06 10.04 10.08 10.20 10.46 10.75 10.99 11.07 10.93 10.79 10.78 10.83 10.24 8.79 6.12 -0.65 -7.76
S21 Mag
3.12 2.98 2.87 2.79 2.76 2.78 2.83 2.90 2.96 2.99 3.01 2.99 2.97 2.95 2.94 2.95 2.99 3.05 3.09 3.14 3.17 3.19 3.18 3.18 3.19 3.24 3.33 3.45 3.54 3.58 3.52 3.46 3.46 3.48 3.25 2.75 2.02 0.93 0.41
Ang
130 112 94 77 60 42 24 5 -15 -35 -56 -76 -97 -117 -137 -157 -177 162 141 119 96 73 50 27 4 -19 -44 -70 -98 -127 -158 171 139 102 58 12 -42 -90 -109
dB
-52.04 -48.40 -45.19 -43.10 -41.31 -40.00 -38.94 -38.13 -37.33 -36.65 -36.03 -35.34 -34.61 -33.89 -32.96 -32.22 -31.57 -30.96 -30.60 -30.17 -29.90 -29.74 -29.50 -29.24 -28.85 -28.34 -27.70 -27.23 -26.80 -26.67 -26.82 -26.97 -26.96 -26.76 -27.23 -28.38 -30.66 -36.71 -42.85
S12 Mag
0.0025 0.0038 0.0055 0.0070 0.0086 0.0100 0.0113 0.0124 0.0136 0.0147 0.0158 0.0171 0.0186 0.0202 0.0225 0.0245 0.0264 0.0283 0.0295 0.0310 0.0320 0.0326 0.0335 0.0345 0.0361 0.0383 0.0412 0.0435 0.0457 0.0464 0.0456 0.0448 0.0449 0.0459 0.0435 0.0381 0.0293 0.0146 0.0072
Ang
-109 -131 -154 -174 164 143 122 103 84 66 49 32 14 -3 -22 -41 -62 -82 -104 -125 -147 -168 171 150 129 107 83 57 29 0 -29 -58 -89 -125 -169 146 91 44 18
dB
-17.16 -15.78 -14.87 -14.55 -14.82 -15.68 -17.22 -19.41 -21.84 -22.43 -20.48 -18.32 -16.78 -15.83 -15.57 -15.93 -16.86 -18.63 -21.67 -27.56 -32.88 -24.55 -19.79 -17.19 -15.72 -15.10 -15.28 -16.61 -19.73 -24.26 -21.06 -17.40 -15.99 -17.25 -18.78 -16.58 -18.73 -13.68 -10.52
S22 Mag
0.14 0.16 0.18 0.19 0.18 0.16 0.14 0.11 0.08 0.08 0.09 0.12 0.14 0.16 0.17 0.16 0.14 0.12 0.08 0.04 0.02 0.06 0.10 0.14 0.16 0.18 0.17 0.15 0.10 0.06 0.09 0.13 0.16 0.14 0.12 0.15 0.12 0.21 0.30
Ang
-126 -154 179 154 128 101 73 39 -6 -62 -110 -145 -172 165 144 125 107 91 78 74 142 171 163 150 135 119 104 89 80 102 136 133 118 107 120 125 125 154 139
Note: 1. Data obtained from on-wafer measurements.
5
AMMC-5026 Typical Scattering Parameters[1] (Tchuck = 25C, Vdd = 8 V, Idd = 150 mA)
Freq. GHz
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0
dB
-24.88 -26.86 -25.30 -23.94 -23.17 -22.72 -22.09 -21.42 -20.79 -20.42 -20.68 -21.76 -24.04 -28.68 -40.72 -30.52 -24.07 -21.00 -18.37 -17.78 -17.89 -18.34 -18.89 -19.20 -19.05 -19.12 -19.87 -20.78 -19.42 -16.18 -13.92 -13.31 -15.52 -23.72 -14.68 -10.47 -9.72 -6.77 -4.70
S11 Mag
0.06 0.05 0.05 0.06 0.07 0.07 0.08 0.08 0.09 0.10 0.09 0.08 0.06 0.04 0.01 0.03 0.06 0.09 0.12 0.13 0.13 0.12 0.11 0.11 0.11 0.11 0.10 0.09 0.11 0.16 0.20 0.22 0.17 0.07 0.18 0.30 0.33 0.46 0.58
Ang
-57 -19 -2 2 2 1 1 -3 -7 -17 -30 -44 -61 -83 -151 86 58 36 12 -18 -49 -84 -123 -166 151 108 62 3 -67 -123 -166 158 129 144 -169 166 159 152 133
dB
9.59 9.20 8.85 8.59 8.49 8.54 8.70 8.89 9.07 9.17 9.20 9.15 9.08 9.01 8.97 9.00 9.11 9.26 9.35 9.49 9.57 9.60 9.57 9.53 9.55 9.65 9.88 10.14 10.33 10.37 10.21 10.03 9.95 9.82 9.06 7.43 4.27 -2.02 -8.14
S21 Mag
3.02 2.88 2.77 2.69 2.66 2.67 2.72 2.78 2.84 2.87 2.88 2.87 2.84 2.82 2.81 2.82 2.85 2.90 2.93 2.98 3.01 3.02 3.01 3.00 3.00 3.04 3.12 3.21 3.29 3.30 3.24 3.17 3.14 3.10 2.84 2.35 1.64 0.79 0.39
Ang
129 112 94 76 59 41 23 4 -16 -37 -58 -78 -99 -119 -139 -159 -180 159 137 115 93 70 46 23 0 -24 -49 -75 -103 -133 -164 165 132 95 52 6 -46 -88 -108
dB
-51.70 -47.74 -45.04 -42.85 -41.11 -39.74 -38.56 -37.72 -37.02 -36.31 -35.60 -34.94 -34.20 -33.47 -32.62 -31.87 -31.28 -30.66 -30.26 -29.87 -29.53 -29.42 -29.17 -28.95 -28.57 -28.09 -27.47 -27.05 -26.69 -26.60 -26.76 -26.92 -26.97 -27.01 -27.64 -29.02 -31.77 -37.46 -42.97
S12 Mag
0.0026 0.0041 0.0056 0.0072 0.0088 0.0103 0.0118 0.0130 0.0141 0.0153 0.0166 0.0179 0.0195 0.0212 0.0234 0.0255 0.0273 0.0293 0.0307 0.0321 0.0334 0.0338 0.0348 0.0357 0.0373 0.0394 0.0423 0.0444 0.0463 0.0468 0.0459 0.0451 0.0448 0.0446 0.0415 0.0354 0.0258 0.0134 0.0071
Ang
-109 -131 -153 -175 164 144 123 104 85 67 49 32 14 -3 -21 -41 -61 -81 -103 -124 -146 -168 172 151 130 108 84 58 30 1 -28 -57 -88 -124 -167 148 96 53 28
dB
-17.27 -15.97 -15.10 -14.79 -15.05 -15.89 -17.37 -19.46 -21.68 -22.16 -20.38 -18.33 -16.84 -15.91 -15.67 -16.02 -16.95 -18.70 -21.76 -27.81 -34.56 -24.90 -19.97 -17.32 -15.83 -15.23 -15.44 -16.82 -20.01 -24.45 -21.24 -17.71 -16.44 -17.71 -18.68 -16.97 -18.00 -13.26 -10.51
S22 Mag
0.14 0.16 0.18 0.18 0.18 0.16 0.14 0.11 0.08 0.08 0.10 0.12 0.14 0.16 0.16 0.16 0.14 0.12 0.08 0.04 0.02 0.06 0.10 0.14 0.16 0.17 0.17 0.14 0.10 0.06 0.09 0.13 0.15 0.13 0.12 0.14 0.13 0.22 0.30
Ang
-123 -152 -179 155 129 102 72 38 -7 -61 -108 -143 -171 166 145 125 107 91 77 69 146 175 165 151 136 120 105 90 81 103 136 133 119 111 123 127 136 151 138
Note: 1. Data obtained from on-wafer measurements.
6
Biasing and Operation AMMC-5026 is biased with a single positive drain supply (Vd) and a negative gate supply (Vg1). The recommended bias conditions for the HMMC-5026 is Vdd = 7 V and Idd = 150 mA for best overall performance. Open circuit is the default setting for the Vg2 biasing. Figure 17 shows a typical bonding configuration for the 2 to 35 GHz operations. In this case, auxiliary drain and Vg1 capacitors (>0.5 F) are used for low frequency (below 2 GHz) performance. Input and output RF ports are DC coupled; therefore, DC decoupling capacitors are required if there are DC paths. The auxiliary gate and drain contacts are used for low frequency performance extension below 1 GHz. When used, these contacts must be AC coupled only. (Do not attempt to apply bias to these pads.) Ground connections are made with plated through-holes to the backside of the device.
Assembly Techniques The chip should be attached directly to the ground plane using either a fluxless AuSn solder preform or electrically conductive epoxy[1]. For conductive epoxy, the amount should be just enough to provide a thin fillet around the bottom perimeter of the die. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. Thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. The RF connections should be kept as short as possible to minimize inductance. Gold mesh[2] or double-bonding with 0.7 mil gold wire is recommended. Mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 8 mS. A guided wedge at an ultrasonic power
level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 2C. The chip is 100 mm thick and should be handled with care. This MMIC has exposed air bridges on the top surface. Handle at edges or with a custom collet (do not pick up die with vacuum on die center.) This MMIC is also static sensitive and ESD handling precautions should be taken. For more information, see Agilent Application Note 54 "GaAs MMIC ESD, Die Attach and Bonding Guidelines." Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Buckbee-Mears Corporation, St. Paul, MN, 800-262-3824.
Vd
RF Output
Aux Vd
Aux Vg2
RF Input
Vg1
Figure 15. AMMC-5026 Schematic.
Aux Vg1
7
89 (RF Output Pad) 750 (Vd) 840 (10 m) (Aux Vd) 505
2964
587
252
318 (Aux Vg2)
89 (RF Input Pad) 3050 ( 10 m)
2323 (Vg1)
2563 (Aux Vg1)
2951
Figure 16. AMMC-5026 Bonding Pad Locations. (dimensions in micrometers)
Notes: All dimensions in microns. Rectangular Pad Dim: 75 x 75 m
1.5 mil dia.Gold Wire Bond to 15 nF DC Feedthru 68 pF Capacitor 4 nH Inductor (1.0 mil Gold Wire Bond with length of 200 mils) Gold Plated Shim 2.0 mil nom. gap
Vd IN HMMC-5026 Vg OUT
Input and Output Thin Film Circuit with 8 pF DC Blocking Capacitor
2.0 mil nom. gap 0.7 mil dia. Gold Bond Wire (Length Not important)
Bonding Island
1.5 mil dia.Gold Wire Bond to 15 nF DC Feedthru
Figure 17. AMMC-5026 Assembly Diagram.
www.agilent.com/semiconductors
For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. April 6, 2004 5988-9882EN


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